HGTP5N120BND Fairchild Semiconductor, HGTP5N120BND Datasheet - Page 8

• Manufacturer Part Number: HGTP5N120BND
• Description: IGBT NPT N-CH 1200V 21A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP5N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 21 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Rev. I2