HGTP5N120BND Fairchild Semiconductor, HGTP5N120BND Datasheet - Page 6

• Manufacturer Part Number: HGTP5N120BND
• Description: IGBT NPT N-CH 1200V 21A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP5N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 21 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
100
10
2.0
1.5
1.0
0.5
1
0
0
0
10
10
10
FREQUENCY = 1MHz
C
25
-1
-2
0
RES
10
o
C
C
C
-5
OES
0.02
0.01
IES
0.05
V
VOLTAGE
0.5
0.1
1
VOLTAGE DROP
0.2
CE
150
5
, COLLECTOR TO EMITTER VOLTAGE (V)
o
C
2
V
F
-55
SINGLE PULSE
, FORWARD VOLTAGE (V)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
o
C
10
3
10
4
-4
15
5
Unless Otherwise Specified (Continued)
6
20
t
1
, RECTANGULAR PULSE DURATION (s)
7
10
25
-3
8
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
DUTY FACTOR, D = t
PEAK T
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
60
50
40
30
20
10
10
0
8
6
4
2
0
10
1
0
J
-2
DUTY CYCLE < 0.5%, T
PULSE DURATION = 250 s
= (P
T
C
0.5
V
D
= 25
CE
x Z
2
, COLLECTOR TO EMITTER VOLTAGE (V)
o
1.0
C, dl
JC
1
/ t
x R
I
EC
F
2
1.5
, FORWARD CURRENT (A)
/ dt = 200A/ s
3
JC
t rr
) + T
t a
t b
2.0
C
HGTG5N120BND, HGTP5N120BND, Rev. B1
10
= 110
V
C
GE
-1
4
2.5
= 15V
P
o
D
C
3.0
5
t
1
t
3.5
2
V
GE
4.0
6
= 10V
10
4.5
0
7