HGTP5N120BND Fairchild Semiconductor, HGTP5N120BND Datasheet - Page 5

• Manufacturer Part Number: HGTP5N120BND
• Description: IGBT NPT N-CH 1200V 21A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP5N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 21 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
250
225
200
175
150
125
100
80
70
60
50
40
30
20
10
40
35
30
25
20
15
0
7
2
2
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
R
FIGURE 13. TRANSFER CHARACTERISTIC
V
G
GE
= 25 , L = 5mH, V
3
3
I
EMITTER CURRENT
= 12V, V
EMITTER CURRENT
8
CE
I
CE
T
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
V
C
GE
= 150
4
4
9
GE
, GATE TO EMITTER VOLTAGE (V)
T
= 15V, T
o
J
T
C
C
= 25
10
5
5
= 25
CE
V
CE
GE
o
T
= 960V
C, T
J
J
o
= 20V
= 12V, V
= 25
C
= 25
R
6
11
G
6
J
= 150
= 25 , L = 5mH, V
o
o
C
C, T
GE
T
7
12
o
J
7
C
C, V
= 15V, T
= 150
= -55
Unless Otherwise Specified (Continued)
GE
8
o
o
13
8
= 12V
C, V
C
J
= 150
GE
CE
9
14
9
= 960V
= 15V
o
C
10
10
15
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
250
200
150
100
16
14
12
10
50
40
35
30
25
20
15
10
8
6
4
2
0
0
0
2
2
I
T
G(REF)
FIGURE 14. GATE CHARGE WAVEFORMS
R
J
G
= 25
3
= 25 , L = 5mH, V
3
EMITTER CURRENT
I
EMITTER CURRENT
I
CE
CE
10
T
o
= 1mA, R
C, T
J
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
= 25
V
CE
4
J
4
= 150
o
C, T
= 1200V
V
Q
L
CE
20
G
= 120 , T
, GATE CHARGE (nC)
o
J
T
5
= 400V
5
C, V
J
= 150
CE
= 25
HGTG5N120BND, HGTP5N120BND, Rev. B1
GE
T
= 960V
R
o
J
o
30
G
C, V
C
= 12V
6
C, V
6
= 150
= 25 , L = 5mH, V
= 25
V
CE
GE
GE
o
o
= 800V
C, V
= 15V
C
= 12V OR 15V
7
7
40
GE
= 12V OR 15V
8
8
CE
50
= 960V
9
9
10
10
60