HGTP5N120BND Fairchild Semiconductor, HGTP5N120BND Datasheet - Page 4

• Manufacturer Part Number: HGTP5N120BND
• Description: IGBT NPT N-CH 1200V 21A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP5N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 21 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
200
100
50
10
3000
2500
2000
1500
1000
30
25
20
15
10
500
5
0
2
0
0
2
P
f
f
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
R
MAX1
MAX2
C
T
ØJC
T
J
= CONDUCTION DISSIPATION
R
J
= 150
G
EMITTER CURRENT
EMITTER CURRENT
(DUTY FACTOR = 50%)
I
= 150
CE
V
= 0.75
I
= 0.05 / (t
= (P
= 25 , L = 5mH, V
3
CE
CE
, COLLECTOR TO EMITTER CURRENT (A)
T
o
, COLLECTOR TO EMITTER CURRENT (A)
2
, COLLECTOR TO EMITTER VOLTAGE (V)
C
D
o
C, R
C, V
o
= -55
- P
C/W, SEE NOTES
4
C
G
d(OFF)I
GE
) / (E
o
= 25 , L = 5mH, V
C
= 12V, V
ON
5
4
GE
+ t
T
4
CE
J
+ E
d(ON)I
= 12V
= 25
T
GE
= 960V
C
OFF
T
6
= 75
IDEAL DIODE
C
o
= 15V
)
C, V
)
= 25
o
6
C, V
GE
CE
7
o
110
110
C
T
= 12V, V
GE
6
T
= 960V
Unless Otherwise Specified (Continued)
C
o
o
C
C
C
= 150
= 15V
8
15V
12V
V
GE
8
GE
75
75
o
C
T
8
o
o
= 15V
C
9
C 15V
C 12V
V
GE
10
10
10
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
30
25
20
15
10
40
35
30
25
20
15
10
5
0
900
800
700
600
500
400
300
200
10
0
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
V
2
CE
T
R
J
G
= 840V, R
= 150
EMITTER CURRENT
V
= 25 , L = 5mH, V
V
I
T
CE
11
GE
3
CE
C
2
o
, COLLECTOR TO EMITTER VOLTAGE (V)
, GATE TO EMITTER VOLTAGE (V)
= -55
, COLLECTOR TO EMITTER CURRENT (A)
C, V
G
4
GE
o
= 25 , T
C
= 12V OR 15V
12
4
5
J
CE
HGTG5N120BND, HGTP5N120BND, Rev. B1
T
DUTY CYCLE <0.5%, V
PULSE DURATION = 250 s
= 125
J
= 960V
= 25
6
13
T
o
C
C
o
C, V
= 25
6
I
t
SC
SC
7
GE
o
C
= 12V OR 15V
14
8
T
8
C
GE
= 150
9
15
= 15V
80
70
60
50
40
30
20
o
C
10
10