HGTP5N120BND Fairchild Semiconductor, HGTP5N120BND Datasheet - Page 3

• Manufacturer Part Number: HGTP5N120BND
• Description: IGBT NPT N-CH 1200V 21A TO-220AB
• Manufacturer: Fairchild Semiconductor

Specifications of HGTP5N120BND

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 5A
• Current - Collector (ic) (max): 21A
• Power - Max: 167W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-220AB
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.45 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 21 A
• Gate-emitter Leakage Current: +/- 250 nA
• Power Dissipation: 167 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 21 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
NOTE:
Typical Performance Curves
©2003 Fairchild Semiconductor Corporation
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
3. Turn-Off Energy Loss (E
FIGURE 1. DC COLLECTOR CURRENT vs CASE
ending at the point where the collector current equals zero (I
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
25
20
15
10
5
0
25
PARAMETER
TEMPERATURE
50
T
C
, CASE TEMPERATURE (
OFF
75
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
T
C
= 25
100
o
C, Unless Otherwise Specified (Continued)
Unless Otherwise Specified
SYMBOL
o
t
C)
t
d(OFF)I
d(ON)I
E
R
E
V
V
OFF
t
t
125
t
ON
EC
rI
rr
GE
fI
JC
= 15V
IGBT and Diode at T
I
V
V
R
L = 5mH,
Test Circuit (Figure 20)
I
I
I
IGBT
Diode
CE
EC
EC
EC
150
GE
CE
G
CE
= 25 ,
= 5A,
= 10A
= 7A, dl
= 1A, dl
= 960V,
= 15V,
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
TEST CONDITIONS
EC
EC
/dt = 200A/ s
/dt = 200A/ s
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
35
30
25
20
15
10
5
0
J
= 150
0
T
J
o
= 150
C,
200
V
CE
o
C, R
, COLLECTOR TO EMITTER VOLTAGE (V)
400
G
= 25 , V
MIN
-
-
-
-
-
-
-
-
-
-
-
600
GE
HGTG5N120BND, HGTP5N120BND, Rev. B1
= 15V, L = 5mH
1000
TYP
2.70
800
182
175
560
20
15
50
30
-
-
1000
MAX
1300
3.50
0.75
1.75
280
200
800
25
20
65
40
1200
UNITS
o
o
C/W
C/W
ns
ns
ns
ns
ns
ns
V
J
J
1400