IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 10

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13.
Figure 13. Typical switching energy losses as a
Figure 13.
Figure 13.
Figure 15.
Figure 15.
Figure 15.
Figure 15. Typical switching energy losses as a
12
10
8
6
4
2
0
4
3
2
1
0
5
0
Typical switching energy losses as a
Typical switching energy losses as a
function of collector current
function of collector current
(ind. load,
V
Typical switching energy losses as a
Typical switching energy losses as a
function of junction temperature
function of junction temperature
(ind load,
R
Typical switching energy losses as a
function of collector current
function of collector current
Typical switching energy losses as a
function of junction temperature
function of junction temperature
25
•Š=15/0V,
•=23Â, test circuit in Fig. E)
EÓËË
EÓÒ
EÚÙ
EÓËË
EÓÒ
EÚÙ
T
Î, JUNCTION TEMPERATURE [°C]
I
†, COLLECTOR CURRENT [A]
15
50
V
T
†Š=600V,
Î=175°C,
R
•=23Â, test circuit in Fig. E)
75
25
V
100
V
†Š=600V,
•Š=15/0V,
35
125
High speed switching series third generation
I
†=25A,
150
45
175
10
Figure 14.
Figure 14. Typical switching energy losses as a
Figure 14.
Figure 14.
Figure 16.
Figure 16.
Figure 16.
Figure 16. Typical switching energy losses as a
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
400
5
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
Typical switching energy losses as a
Typical switching energy losses as a
Typical switching energy losses as a
function of gate resistor
function of gate resistor
function of gate resistor
function of gate resistor
(ind. load,
V
Typical switching energy losses as a
Typical switching energy losses as a
Typical switching energy losses as a
function of collector emitter voltage
function of collector emitter voltage
function of collector emitter voltage
function of collector emitter voltage
(ind. load,
R
•Š=15/0V,
•=23Â, test circuit in Fig. E)
EÓËË
EÓÒ
EÚÙ
EÓËË
EÓÒ
EÚÙ
15
500
R
•, GATE RESISTOR [Â]
T
T
25
Î=175°C,
Î=175°C,
I
†=25A, test circuit in Fig. E)
600
35
IGW25N120H3
V
V
†Š=600V,
•Š=15/0V,
45
Rev. 1.1, 2011-01-25
700
I
†=25A,
55
800
65