IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 12

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 17.
Figure 17. Typical gate charge
Figure 17.
Figure 17.
Figure 19.
Figure 19.
Figure 19.
Figure 19. Typical short circuit collector current as a
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
10
0
Typical gate charge
Typical gate charge
(
Typical short circuit collector current as a
Typical short circuit collector current as a
function of gate-emitter voltage
function of gate-emitter voltage
(
Typical gate charge
Typical short circuit collector current as a
function of gate-emitter voltage
function of gate-emitter voltage
I
V
20
†=25A)
240V
960V
V
†Šù600V, start at
•Š, GATE-EMITTER VOLTAGE [V]
12
Q
40
•Š, GATE CHARGE [nC]
60
14
T
Î=25°C)
80
100
16
High speed switching series third generation
120
18
11
Figure 18.
Figure 18. Typical capacitance as a function of
Figure 18.
Figure 18.
Figure 20.
Figure 20.
Figure 20.
Figure 20. Short circuit withstand time as a function
1000
100
10
50
40
30
20
10
0
10
0
V
†Š, COLLECTOR-EMITTER VOLTAGE [V]
Typical capacitance as a function of
Typical capacitance as a function of
Typical capacitance as a function of
collector-emitter voltage
collector-emitter voltage
collector-emitter voltage
collector-emitter voltage
(
Short circuit withstand time as a function
Short circuit withstand time as a function
Short circuit withstand time as a function
of gate-emitter voltage
of gate-emitter voltage
of gate-emitter voltage
of gate-emitter voltage
(
V
V
V
•Š=0V, f=1MHz)
†Šù600V, start at
•Š, GATE-EMITTER VOLTAGE [V]
12
10
14
IGW25N120H3
T
Îù150°C)
16
20
Rev. 1.1, 2011-01-25
18
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30
20