IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 4

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Maximum ratings
Thermal Resistance
Characteristic
Electrical Characteristic, at
Electrical Characteristic, at
Electrical Characteristic, at
Electrical Characteristic, at
Static Characteristic
Parameter
Collector-emitter voltage
DC collector current, limited by
T
T
Pulsed collector current,
Turn off safe operating area
Gate-emitter voltage
Short circuit withstand time
V
Allowed number of short circuits < 1000
Time between short circuits: ú 1.0s
T
Power dissipation
Power dissipation
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Parameter
IGBT thermal resistance,
junction - case
Thermal resistance
junction - ambient
Parameter
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
† = 25°C
† = 100°C
ÝÎ = 175°C
•Š = 15.0V,
V
†† ù 600V
T
T
† = 25°C
† = 100°C
t
Ô limited by
T T T T
V
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
†Š ù 1200V,
T
ÝÎÑÈà
T
Symbol Conditions
R
R
Symbol Conditions
V
V
V
I
I
g
†Š»
•Š»
ÝÎÑÈà
ËÙ
ñ…çò†Š»
†ŠÙÈÚ
•ŠñÚÌò
ÚÌñÎ-Êò
ÚÌñÎ-Èò
High speed switching series third generation
T
ÝÎ ù 175°C
V
V
T
T
T
I
V
T
T
V
V
† = 0.85mA,
ÝÎ = 25°C
ÝÎ = 125°C
ÝÎ = 175°C
ÝÎ = 25°C
ÝÎ = 175°C
•Š = 0V,
•Š = 15.0V,
†Š = 1200V,
†Š = 0V,
†Š = 20V,
4
V
I
† = 0.50mA
I
•Š = 20V
† = 25.0A
V
Symbol
V
I
I
-
V
t
P
T
T
M
I
† = 25.0A
V
†
†ÔÛÐÙ
Ƞ
†Š =
ÝÎ
ÙÚÃ
†Š
•Š
ÚÓÚ
•Š = 0V
V
•Š
1200
min.
5.0
-40...+175
-55...+150
-
-
-
-
-
-
-
IGW25N120H3
Value
100.0
100.0
326.0
156.0
1200
50.0
25.0
Max. Value
±20
260
0.6
10
Value
0.46
2.05
2.50
2.70
13.0
typ.
5.8
Rev. 1.1, 2011-01-25
40
-
-
-
-
2500.0
250.0
max.
2.40
600
6.5
-
-
-
-
Unit
Nm
µs
°C
°C
°C
W
V
A
A
A
V
Unit
Unit
K/W
K/W
µA
nA
V
V
V
S