IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 9

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 9.
Figure 9. Typical switching times as a function of
Figure 9.
Figure 9.
Figure 11.
Figure 11.
Figure 11.
Figure 11. Typical switching times as a function of
1000
1000
100
100
10
10
5
0
Typical switching times as a function of
Typical switching times as a function of
collector current
collector current
(ind. load,
V
Typical switching times as a function of
collector current
collector current
Typical switching times as a function of
Typical switching times as a function of
junction temperature
junction temperature
(ind. load,
I
Typical switching times as a function of
junction temperature
junction temperature
•Š=15/0V,
†=25A,
25
tÁñÓËËò
tË
tÁñÓÒò
tØ
T
Î, JUNCTION TEMPERATURE [°C]
I
†, COLLECTOR CURRENT [A]
15
50
R
T
•=23Â, test circuit in Fig. E)
V
Î=175°C,
R
†Š=600V,
•=23Â, test circuit in Fig. E)
75
tÁñÓËËò
tË
tÁñÓÒò
tØ
25
V
†Š=600V,
100
V
•Š=15/0V,
35
125
High speed switching series third generation
150
45
175
9
Figure 10.
Figure 10. Typical switching times as a function of
Figure 10.
Figure 10.
Figure 12.
Figure 12.
Figure 12.
Figure 12. Gate-emitter threshold voltage as a
1000
100
10
7
6
5
4
3
2
5
0
Typical switching times as a function of
Typical switching times as a function of
Typical switching times as a function of
gate resistor
gate resistor
gate resistor
gate resistor
(ind. load,
V
Gate-emitter threshold voltage as a
Gate-emitter threshold voltage as a
Gate-emitter threshold voltage as a
function of junction temperature
function of junction temperature
function of junction temperature
function of junction temperature
(
I
25
†=0.85mA)
•Š=15/0V,
T
tÁñÓËËò
tË
tÁñÓÒò
tØ
15
Î, JUNCTION TEMPERATURE [°C]
R
50
•, GATE RESISTOR [Â]
T
25
Î=175°C,
I
†=25A, test circuit in Fig. E)
75
35
IGW25N120H3
typ.
min.
max.
V
100
†Š=600V,
45
Rev. 1.1, 2011-01-25
125
55
150
175
65