IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 5

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristic, at
Electrical Characteristic, at
Electrical Characteristic, at
Electrical Characteristic, at
Dynamic Characteristic
Switching Characteristic, Inductive Load, at
Switching Characteristic, Inductive Load, at
Switching Characteristic, Inductive Load, at
Switching Characteristic, Inductive Load, at
IGBT Characteristic
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ú 1.0s
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on energy
Turn-off energy
Total switching energy
T T T T
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
ÝÎ = 25°C, unless otherwise specified
Symbol Conditions
C
C
C
Q
L
I
Symbol Conditions
t
t
t
t
E
E
E
E
E
E
†ñ»†ò
ÁñÓÒò
Ø
ÁñÓËËò
Ë
Š
ÓÒ
ÓËË
ÚÙ
ÓÒ
ÓËË
ÚÙ
ÍþÙ
ÓþÙ
ØþÙ
•
High speed switching series third generation
T T T T
ÝÎ = 25°C
ÝÎ = 25°C
ÝÎ = 25°C
ÝÎ = 25°C
V
V
V
V
t
T
T
V
V
r
C
L
Energy losses include “tail” and
diode (IKW25N120H3) reverse
recovery.
T
V
V
r
C
L
Energy losses include “tail” and
diode (IDH15S120) reverse
recovery.
»† ù 10µs
• = 23.0Â,
• = 3.0Â,
ÿ,
ÿ,
ÝÎ = 175°C
ÝÎ = 25°C,
ÝÎ = 25°C,
†Š = 25V,
†† = 960V,
•Š = 15V
•Š = 15.0V,
†† = 600V,
•Š = 0.0/15.0V,
†† = 800V,
•Š = 0.0/15.0V,
ÿ = 67pF
ÿ = 67pF
C
C
ÿ from Fig. E
ÿ from Fig. E
5
L
V
L
ÿ = 80nH,
I
I
I
•Š = 0V, f = 1MHz
ÿ = 80nH,
† = 25.0A,
V
† = 25.0A,
† = 10.0A,
†† ù 600V,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW25N120H3
Value
Value
115.0
1430
13.0
1.80
0.85
2.65
0.08
0.27
0.35
typ.
typ.
277
Rev. 1.1, 2011-01-25
95
75
87
27
41
17
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
mJ
mJ
mJ
mJ
mJ
mJ
nC
nH
pF
ns
ns
ns
ns
A