IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 13

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21.
Figure 21. IGBT transient thermal impedance
Figure 21.
Figure 21.
0.001
0.01
0.1
1
1E-6
IGBT transient thermal impedance
IGBT transient thermal impedance
(
IGBT transient thermal impedance
D
1E-5
=
t
Ô/T)
τ
i:
rÍ[K/W]:
Í[s]:
1E-4
t
Ô, PULSE WIDTH [s]
1
0.08133
2.6E-4
2
0.09366
1.7E-3
0.001
3
0.22305
0.01009673
0.01
4
0.05925
0.0336145
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
High speed switching series third generation
0.1
5
5.7E-3
0.2730749
1
12
IGW25N120H3
Rev. 1.1, 2011-01-25