FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 2
![MOSFET N-CH DUAL 30V POWER56](/photos/5/43/54314/fdms9600s_sml.jpg)
FDMS9600S
Manufacturer Part Number
FDMS9600S
Description
MOSFET N-CH DUAL 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS9600S.pdf
(9 pages)
Specifications of FDMS9600S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A, 16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1705pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power56
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A @ Q1 or 16 A @ Q2
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS9600STR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS9600S
Manufacturer:
Fairchild Semiconductor
Quantity:
27 745
Company:
Part Number:
FDMS9600S
Manufacturer:
FAIRCH
Quantity:
308
Part Number:
FDMS9600S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMS9600S Rev.D1
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
f = 1MHz
V
V
Q1
V
Q2
V
V
D
D
D
D
D
D
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DD
GS
DD
DD
= 250µA, V
= 1mA, V
= 250µA, referenced to 25°C
= 1mA, referenced to 25°C
= 250µA, referenced to 25°C
= 1mA, referenced to 25°C
= 24V, V
= 15V, V
= 10V, R
= ±20V, V
= V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 10V, I
= 4.5V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 15V, V
= 15V, V
DS
DS
Test Conditions
, I
, I
GS
2
D
D
D
D
D
D
D
GS
D
D
GEN
GS
GS
D
D
GS
= 1A,
GS
DS
= 12A
= 12A , T
= 16A
= 16A , T
= 12A
= 16A
= 0V
= 250µA
= 1mA
= 10A
= 14A
= 0V, f= 1MHz
= 4.5V, I
= 4.5V, I
= 0V
= 0V
= 0V
= 6Ω
J
J
D
D
= 125°C
= 125°C
= 12A
= 16A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Min
30
30
1
1
1280
2300
1545
Typ
-4.5
-6.0
525
250
1.5
1.8
7.0
9.2
8.6
4.5
5.3
5.4
1.0
1.7
35
29
54
68
2.7
6.5
80
13
17
11
42
54
12
32
21
6
9
3
8
±100
±100
Max
1705
3060
2055
12.4
13.0
500
700
120
375
8.5
5.5
7.0
8.3
1
23
31
12
20
67
86
22
51
13
29
3
3
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
µA
nA
nA
pF
pF
pF
nC
nC
nC
Ω
ns
ns
ns
ns
V
S
V