FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 2

• Manufacturer Part Number: FDMS9600S
• Description: MOSFET N-CH DUAL 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS9600S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1705pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A @ Q1 or 16 A @ Q2
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS9600STR

FDMS9600S Rev.D1
Dynamic Characteristics
Electrical Characteristics
Off Characteristics
On Characteristics
Switching Characteristics
BV
∆BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
∆V
DSS
GSS
d(on)
r
d(off)
f
DS(on)
FS
GS(th)
iss
oss
rss
g
∆T
∆T
g(TOT)
gs
gd
Symbol
DSS
GS(th)
DSS
J
J
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Parameter
T
J
= 25°C unless otherwise noted
I
I
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
f = 1MHz
V
V
Q1
V
Q2
V
V
D
D
D
D
D
D
DS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DD
DD
DS
DD
GS
DD
DD
= 250µA, V
= 1mA, V
= 250µA, referenced to 25°C
= 1mA, referenced to 25°C
= 250µA, referenced to 25°C
= 1mA, referenced to 25°C
= 24V, V
= 15V, V
= 10V, R
= ±20V, V
= V
= V
= 10V, I
= 4.5V, I
= 10V, I
= 10V, I
= 4.5V, I
= 10V, I
= 10V, I
= 10V, I
= 10V, I
= 15V, V
= 15V, V
DS
DS
Test Conditions
, I
, I
GS
2
D
D
D
D
D
D
D
GS
D
D
GEN
GS
GS
D
D
GS
= 1A,
GS
DS
= 12A
= 12A , T
= 16A
= 16A , T
= 12A
= 16A
= 0V
= 250µA
= 1mA
= 10A
= 14A
= 0V, f= 1MHz
= 4.5V, I
= 4.5V, I
= 0V
= 0V
= 0V
= 6Ω
J
J
D
D
= 125°C
= 125°C
= 12A
= 16A
Type
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q2
Q1
Q2
Q1
Min
30
30
1
1
1280
2300
1545
Typ
-4.5
-6.0
525
250
1.5
1.8
7.0
9.2
8.6
4.5
5.3
5.4
1.0
1.7
35
29
54
68
2.7
6.5
80
13
17
11
42
54
12
32
21
6
9
3
8
±100
±100
Max
1705
3060
2055
12.4
13.0
500
700
120
375
8.5
5.5
7.0
8.3
1
23
31
12
20
67
86
22
51
13
29
3
3
www.fairchildsemi.com
mV/°C
mV/°C
Units
mΩ
µA
nA
nA
pF
pF
pF
nC
nC
nC
Ω
ns
ns
ns
ns
V
S
V