FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 6

• Manufacturer Part Number: FDMS9600S
• Description: MOSFET N-CH DUAL 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS9600S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1705pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A @ Q1 or 16 A @ Q2
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS9600STR

FDMS9600S Rev.D1
Typical Characteristics (Q2 SyncFET)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
60
50
40
30
20
10
-50
0
0.0
Figure 12. On-Region Characteristics
0
Figure 14. Normalized On-Resistance
1.0
Figure 16. Transfer Characteristics
V
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
V
GS
V
DD
I
D
-25
GS
= 16A
= 10V
= 5V
=10V
vs Junction Temperature
T
1.5
V
0.2
J
V
, JUNCTION TEMPERATURE
DS
GS
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
0
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
T
J
2.0
=125
25
0.4
o
C
V
V
V
50
µ
V
2.5
GS
s
GS
GS
GS
= 3.5V
= 4V
= 4.5V
= 6V
0.6
75
µ
T
3.0
s
J
= -55
100
(
o
T
0.8
V
o
C
J
C
GS
)
3.5
= 25
125
= 3V
o
C
150
1.0
4.0
6
Figure 13. Normalized on-Resistance vS Drain
1E-3
0.01
0.1
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
60
10
14
12
10
1
8
6
4
2
Figure 15. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 17. Source to Drain Diode
V
V
T
GS
J
GS
V
V
= 125
SD
Current and Gate Voltage
= 0V
=3V
GS
V
, BODY DIODE FORWARD VOLTAGE (V)
10
GS
= 6V
o
T
, GATE TO SOURCE VOLTAGE (V)
C
I
D
J
0.2
I
Source Voltage
D
= 8A
= 25
4
, DRAIN CURRENT(A)
o
20
C
V
GS
= 4.5V
T
J
0.4
T
30
= -55
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
T
J
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
6
J
= 125
= 25
o
C
o
o
C
C
40
0.6
V
V
V
8
GS
GS
GS
www.fairchildsemi.com
= 10V
= 3.5V
= 4V
50
µ
µ
s
s
0.8
60
10