FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 4

• Manufacturer Part Number: FDMS9600S
• Description: MOSFET N-CH DUAL 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS9600S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1705pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A @ Q1 or 16 A @ Q2
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS9600STR

FDMS9600S Rev.D1
Typical Characteristics (Q1 N-Channel)
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
60
50
40
30
20
10
60
50
40
30
20
10
-50
0
0.0
Figure 3. Normalized On-Resistance
0
Figure 1.
1.0
Figure 5. Transfer Characteristics
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
V
V
V
DD
I
GS
D
-25
GS
= 12A
vs Junction Temperature
= 5V
= 10V
=10V
T
V
V
J
1.5
DS
, JUNCTION TEMPERATURE
GS
0.5
On-Region Characteristics
0
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
V
25
V
V
V
GS
GS
GS
GS
2.0
T
J
= 3.5V
= 4.5V
= 4V
= 6V
=125
1.0
µ
50
s
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
o
C
2.5
75
T
100
J
1.5
= -55
(
T
o
3.0
C
J
V
)
= 25
o
125
GS
C
o
= 3V
C
µ
s
150
2.0
3.5
T
J
= 25°C unless otherwise noted
4
1E-3
0.01
0.1
60
10
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1
30
25
20
15
10
0.2
Figure 2.
Figure 4.
5
0
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
0
Figure 6.
2
V
V
GS
T
SD
J
V
= 125
= 0V
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
10
GS
0.4
Normalized On-Resistance
= 3V
On-Resistance vs Gate to
, GATE TO SOURCE VOLTAGE (V)
I
V
o
D
I
D
Source Voltage
C
GS
Source to Drain Diode
= 6A
, DRAIN CURRENT(A)
4
= 10V
T
J
20
= 25
0.6
V
o
GS
C
= 4.5V
30
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
PULSE DURATION = 300
DUTY CYCLE = 2.0%MAX
6
T
0.8
J
T
J
= -55
V
= 125
GS
40
o
T
=3.5V
C
J
o
V
C
V
= 25
8
GS
1.0
GS
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= 6V
= 4V
50
o
C
µ
µ
s
s
1.2
60
10