FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 3

• Manufacturer Part Number: FDMS9600S
• Description: MOSFET N-CH DUAL 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS9600S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1705pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A @ Q1 or 16 A @ Q2
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS9600STR

FDMS9600S Rev.D1
Electrical Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
I
V
t
Q
S
rr
SD
rr
the user's board design.
Symbol
θJA
is determined with the device mounted on a 1in
Maximum Continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
T
2
J
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
a.50°C/W when mounted on
= 25°C unless otherwise noted
a 1 in
2
pad of 2 oz copper
V
V
V
Q1
I
Q2
I
F
F
GS
GS
GS
= 12A, di/dt = 100A/µs
= 16A, di/dt = 300A/µs
= 0V, I
= 0V, I
= 0V, I
Test Conditions
S
S
S
3
= 2.1A
= 3.5A
= 8.2A
(Note 2)
(Note 2)
(Note 2)
θJC
Type
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
is guaranteed by design while R
b. 120°C/W when mounted on a
minimum pad of 2 oz copper
Min
Typ
0.5
0.7
0.4
33
27
20
33
Max
θCA
2.1
3.5
1.2
1.0
1.0
www.fairchildsemi.com
is determined by
Units
nC
ns
A
V