FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 5

• Manufacturer Part Number: FDMS9600S
• Description: MOSFET N-CH DUAL 30V POWER56
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMS9600S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A, 16A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1705pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power56
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V @ Q1
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A @ Q1 or 16 A @ Q2
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMS9600STR

FDMS9600S Rev.D1
Typical Characteristics (Q1 N-Channel)
0.01
100
0.1
10
10
8
6
4
2
0
Figure 7.
0.002
1
0.1
0.01
0
0.1
1
2
I
THIS AREA IS LIMITED
10
D
BY r
SINGLE PULSE
T J = MAX RATE
R
T A = 25
θ
Figure 9.
= 12A
JA
-3
DS(ON)
= 120
DUTY CYCLE-DESCENDING ORDER
D = 0.5
o
V
C
5
DS
Gate Charge Characteristics
o
0.2
0.1
0.05
0.02
0.01
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Q
g
, GATE CHARGE(nC)
Forward Bias Safe
1
V
DD
10
V
DD
SINGLE PULSE
=10V
10
= 20V
-2
Figure 11. Transient Thermal Response Curve
15
V
DD
10
= 15V
20
10
10ms
t, RECTANGULAR PULSE DURATION (s)
1ms
100ms
10s
DC
1s
-1
100
25
T
J
= 25°C unless otherwise noted
5
10
0
2000
1000
100
300
0.5
100
10
30
10
0.1
1
Figure 10.
-3
Figure 8.
f = 1MHz
V
GS
10
V
V
= 0V
DS
10
GS
NOTES:
DUTY FACTOR: D = t
PEAK T
-2
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
1
= 10V
Single Pulse Maximum
t, PULSE WIDTH (s)
Capacitance vs Drain
10
J
= P
-1
DM
1
x Z
10
P
θJA
DM
0
1
/t
x R
10
2
θJA
2
10
t
1
+ T
SINGLE PULSE
R
T
t
A
1
θ
2
JA
A
= 25
= 120
10
o
C
C
C
www.fairchildsemi.com
C
10
oss
rss
iss
o
2
C/W
10
10
30
3
3