FDMS9600S Fairchild Semiconductor, FDMS9600S Datasheet - Page 7
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FDMS9600S
Manufacturer Part Number
FDMS9600S
Description
MOSFET N-CH DUAL 30V POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMS9600S.pdf
(9 pages)
Specifications of FDMS9600S
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A, 16A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1705pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power56
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0085 Ohm @ 10 V @ Q1
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A @ Q1 or 16 A @ Q2
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS9600STR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMS9600S
Manufacturer:
Fairchild Semiconductor
Quantity:
27 745
Company:
Part Number:
FDMS9600S
Manufacturer:
FAIRCH
Quantity:
308
Part Number:
FDMS9600S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMS9600S Rev.D1
Typical Characteristics
10
8
6
4
2
0
Figure 18. Gate Charge Characteristics
0
I
D
= 16A
10
Q
g
, GATE CHARGE(nC)
V
DD
20
=10V
V
DD
= 20V
30
V
DD
= 15V
40
50
7
5000
1000
100
0.1
Figure 19. Capacitance vs Drain
f = 1MHz
V
GS
V
= 0V
DS
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
1
www.fairchildsemi.com
10
C
C
C
oss
rss
iss
30