BSO615CT Infineon Technologies, BSO615CT Datasheet

MOSFET N/P-CH 60V 3.1A/2A 8SOIC

BSO615CT

Manufacturer Part Number
BSO615CT
Description
MOSFET N/P-CH 60V 3.1A/2A 8SOIC
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSO615CT.pdf (13 pages)

Specifications of BSO615CT

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
3.1A, 2A
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
22.5nC @ 10V
Input Capacitance (ciss) @ Vds
380pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO615CXTINTR
SIPMOS
Features
Type
BSO 615 C
Maximum Ratings,at T
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t, T
I
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
D
S
S
Enhancement mode
A
A
A
A
Dual N- and P -Channel
Logic Level
Avalanche rated
d v /d t rated
= 3.1 A, V
= -2 A, V
= 3.1 A , V
= -2 A , V
= 25 °C
= 70 °C
= 25 °C
= 25 °C
DS
DS
DD
Small-Signal-Transistor
DD
= -48 V, d i /d t = -200 A/µs
= 48 V, d i /d t = 200 A/µs
Package
SO 8
= -25 V, R
= 25 V, R
jmax
j
= 25 °C, unless otherwise specified
GS
GS
= 150 °C
= 25
= 25
Product Summary
Drain source voltage
Drain-Source on-state
resistance
Continuous drain current
Preliminary data
Ordering Code
Q67041-S4024
jmax
Page 1
Symbol
I
I
E
E
d v /d t
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
V
R
I
D
DS
DS(on)
12.4
±20
3.1
2.5
0.2
47
N
6
2
-
-
-55...+150
55/150/56
0.11
3.1
Value
60
N
BSO 615 C
-1.6
±20
0.2
70
-2
-8
P
6
2
-
-
1999-10-28
-60
0.3
-2
P
Unit
A
mJ
kV/µs
V
W
°C
V
A

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BSO615CT Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features Dual N- and P -Channel Enhancement mode Logic Level Avalanche rated rated Type Package BSO 615 Maximum Ratings, °C, unless otherwise specified j Parameter Continuous drain current ...

Page 2

Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint sec cooling area ; t @ min. footprint sec. ...

Page 3

Electrical Characteristics Parameter Characteristics Transconductance DS(on)max DS(on)max Input capacitance ...

Page 4

Electrical Characteristics Parameter Characteristics Gate to source charge 3 - Gate to drain charge ...

Page 5

Power Dissipation (N-Ch tot A BSO 615 C 2.2 W 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Drain current (N-Ch ...

Page 6

Safe operating area (N-Ch parameter : °C A BSO 615 ...

Page 7

Typ. output characteristics (N-Ch parameter µs p BSO 615 C 7 2.00W tot 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 ...

Page 8

Typ. transfer characteristics (N-Ch.) parameter µ 7.0 A 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 ...

Page 9

Drain-source on-resistance (N-Ch DS(on) j parameter : BSO 615 C 0.30 0.24 0.22 0.20 0.18 0.16 98% 0.14 0.12 0.10 typ 0.08 0.06 0.04 0.02 0.00 ...

Page 10

Typ. capacitances (N-Ch parameter MHz Forward characteristics of reverse diode (N-Ch.) ...

Page 11

Avalanche Energy parameter 3 105 Typ. gate charge ...

Page 12

Drain-source breakdown voltage (N-Ch.) (BR)DSS j BSO 615 -60 - Preliminary data Drain-source breakdown voltage V (BR)DSS -72 V -68 -66 ...

Page 13

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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