BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 7

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Typ. output characteristics (N-Ch.)
I
parameter: t
Typ. drain-source-on-resistance (N-Ch.)
R
parameter: V
D
DS(on)
= f ( V
0.36
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
A
7.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0
BSO 615 C
BSO 615 C
V
DS
= f ( I
P
GS
3.0
c
tot
g
[V] =
)
= 2.00W
1.0
f
3.2
d
p
D
GS
= 80 µs
)
3.5
e
c
2.0
3.7
f
4.0
g
3.0
d
4.0
e
c
a
5.0
d
b
V GS [V]
Preliminary data
e
a
b
c
d
e
f
g
f
A
V
V
I
D
g
DS
2.5
2.7
3.0
3.2
3.5
3.7
4.0
5.0
6.5
Page 7
Typ. output characteristics (P-Ch.)
I
parameter: t
Typ. drain-source-on-resistance (P-Ch.)
R
parameter: V
D
DS(on)
= f ( V
-5.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
A
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
0.0
BSO 615 C
BSO 615 C
V
DS
= f ( I
-2.5
GS
P
a
tot
-0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 °C -3.4
[V] =
)
= 2.00W
-2.7
a
b
p
g
D
GS
= 80 µs
-3.0
)
c
f
-3.2
d
e
b
-3.5
e
-3.7
f
-4.0
g
c
BSO 615 C
1999-10-28
c
a
d
b
V GS [V]
a
b
c
d
e
f
g
d
V
T
g
e
j
DS
-2.5
-2.7
-3.0
-3.2
-3.5
-3.7
-4.0
f
-5.0