BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 12

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Drain-source breakdown voltage
V
(BR)DSS
V
72
68
66
64
62
60
58
56
54
-60
BSO 615 C
= f ( T
-20
j
), (N-Ch.)
20
60
100
°C
Preliminary data
T
j
180
Page 12
Drain-source breakdown voltage
V
(BR)DSS
-72
-68
-66
-64
-62
-60
-58
-56
-54
V
-60
BSO 615 C
= f ( T
-20
j
), (P-Ch.)
20
60
100
BSO 615 C
1999-10-28
°C
T
j
180