BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 8

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Typ. transfer characteristics (N-Ch.)
parameter: t
I
Typ. forward transconductance (N-Ch.)
g
parameter: g
D
fs
= f ( V
= f( I
10.0
A
S
7.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
D
GS
); T
1
), V
p
j
fs
= 25 °C
2
= 80 µs
DS
3
2 x I
4
5
D
x R
6
DS(on)max
7
8
Preliminary data
V
GS
A
V
I
D
5.0
10
Page 8
Typ. transfer characteristics (P-Ch.)
parameter: t
I
Typ. forward transconductance (P-Ch.)
g
parameter: g
D
fs
= f ( V
= f( I
-5.0
A
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
S
0.0
4.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
0.0
D
GS
); T
), V
-1.0
j
p
fs
= 25 °C
= 80 µs
DS
-2.0
2 x I
-3.0
D
x R
-4.0
DS(on)max
BSO 615 C
1999-10-28
A
V
GS
V
I
D
-6.0
-5.0