BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 5

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Power Dissipation (N-Ch.)
P
Drain current (N-Ch.)
I
parameter: V
D
tot
= f ( T
W
A
= f ( T
2.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.4
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
0
BSO 615 C
BSO 615 C
A
)
A
20
20
)
GS
40
40
10 V
60
60
80
80
100
100
120
120
Preliminary data
°C
°C
T
T
A
A
160
160
Page 5
Power Dissipation (P-Ch.)
P
Drain current (P-Ch.)
I
parameter: V
D
tot
= f ( T
W
-2.2
-1.8
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
-0.4
-0.2
= f ( T
2.2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
A
0
0
BSO 615 C
BSO 615 C
A
)
A
20
20
)
GS
40
40
-10 V
60
60
80
80
100
100
BSO 615 C
120
120
1999-10-28
°C
°C
T
T
A
A
160
160