BSO615CT Infineon Technologies, BSO615CT Datasheet - Page 3

• Manufacturer Part Number: BSO615CT
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615CT

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615CXTINTR

Electrical Characteristics, at T
Parameter
Characteristics
Transconductance
V
VV
Input capacitance
V
V
Output capacitance
V
V
Reverse transfer capacitance
V
V
Turn-on delay time
V
V
Rise time
V
V
Turn-off delay time
V
V
Fall time
V
V
DS
GS
GS
GS
GS
GS
GS
DD
DD
DD
DD
DD
DD
DD
DD
DS
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
= 0 V, V
= 30 V, V
= -30 V, V
= 30 V, V
= -30 V, V
= 30 V, V
= -30 V, V
= 30 V, V
= -30 V, V
2
2
*
I
*
D *
I
D *
R
DS
DS
DS
DS
DS
DS
R
DS(on)max
GS
GS
GS
GS
GS
GS
GS
GS
DS(on)max
= 25 V, f = 1 MHz
= -25 V, f = 1 MHz
= 25 V, f = 1 MHz
= -25 V, f = 1 MHz
= 25 V, f = 1 MHz
= -25 V, f = 1 MHz
= 4.5 V, I
= 4.5 V, I
= 4.5 V, I
= 4.5 V, I
= -4.5 V, I
= -4.5 V, I
= -4.5 V, I
= -4.5 V, I
, I
, I
D
D
D
D
D
D
= 2.7 A
D
D
D
D
= 2.7 A, R
= 2.7 A, R
= 2.7 A, R
= 2.7 A, R
= -1.7 A
= -1.7 A, R
= -1.7 A, R
= -1.7 A, R
= -1.7 , R
j
= 25 °C, unless otherwise specified
Preliminary data
G
G
G
G
G
= 16
= 16
= 16
= 16
G
G
G
= 13
= 13
= 13
= 13
Page 3
N
P
N
P
N
P
N
P
N
P
N
P
N
P
N
P
Symbol
g
C
C
C
t
t
t
t
d(on)
r
d(off)
f
fs
iss
oss
rss
min.
2.25
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
typ.
300
365
105
105
125
5.5
2.4
50
40
16
24
18
90
90
75
25
BSO 615 C
1999-10-28
max.
380
460
120
135
115
160
190
135
65
50
24
36
40
27
-
-
Unit
S
pF
ns