IPD30N10S3L-34 Infineon Technologies, IPD30N10S3L-34 Datasheet - Page 2

• Manufacturer Part Number: IPD30N10S3L-34
• Description: MOSFET N-CH 100V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N10S3L-34

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.4V @ 29µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1976pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD30N10S3L-34; IPD30N10S3L-34TR; SP000261248

Rev. 1.1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
1)
j
=25 °C, unless otherwise specified
Symbol
R
R
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
thJC
thJA
DS(on)
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
j
j
GS
DS
DS
DS
GS
GS
GS
=25°C
=125°C
page 2
=V
=80V, V
=80V, V
=0V, I
=16V, V
=4.5V, I
=10 V, I
2
Conditions
cooling area
GS
, I
1)
D
= 1mA
D
D
D
GS
GS
DS
=29µA
=30A
=30 A
=0V,
=0V,
=0V
3)
min.
100
1.2
-
-
-
-
-
-
-
-
Values
0.01
32.2
25.8
typ.
1.7
1
-
-
-
-
-
IPD30N10S3L-34
max.
41.8
31.0
100
2.6
2.4
0.1
62
40
10
-
2008-04-08
Unit
K/W
V
µA
nA
m