IPD30N10S3L-34 Infineon Technologies, IPD30N10S3L-34 Datasheet - Page 5

• Manufacturer Part Number: IPD30N10S3L-34
• Description: MOSFET N-CH 100V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N10S3L-34

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.4V @ 29µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1976pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD30N10S3L-34; IPD30N10S3L-34TR; SP000261248

Rev. 1.1
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
= f(V
= f(V
120
60
40
20
80
40
0
0
DS
GS
1
0
); T
); V
GS
j
j
DS
= 25 °C
1
= 6V
2
2
V
V
GS
10 V
DS
3
3
[V]
[V]
-55 °C
4
4
25 °C
5
175 °C
3.5 V
4.5 V
3 V
4 V
5 V
page 5
5
6
6 Typ. drain-source on-state resistance
R
parameter: V
8 Typ. drain-source on-state resistance
R
DS(on)
DS(on)
80
70
60
50
40
30
20
60
50
40
30
20
10
= f(I
= f(T
-60
0
3 V
D
j
); T
); I
GS
-20
D
j
= 25 °C
= 30 A; V
3.5 V
20
20
GS
T
I
D
j
60
= 10 V
[°C]
[A]
IPD30N10S3L-34
4 V
100
40
140
2008-04-08
4.5 V
10 V
5 V
180
60