IPD30N10S3L-34 Infineon Technologies, IPD30N10S3L-34 Datasheet - Page 9

• Manufacturer Part Number: IPD30N10S3L-34
• Description: MOSFET N-CH 100V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N10S3L-34

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.4V @ 29µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1976pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD30N10S3L-34; IPD30N10S3L-34TR; SP000261248

Rev. 1.1
Revision History
Version
1.1
1.1
Date
page 9
08.04.2008
08.04.2008
Changes
Page 1: V
±20V
Page 3: Footnote 2) added
GS
changed from ±16V to
IPD30N10S3L-34
2008-04-08