IPD30N10S3L-34 Infineon Technologies, IPD30N10S3L-34 Datasheet - Page 3

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IPD30N10S3L-34

Manufacturer Part Number
IPD30N10S3L-34
Description
MOSFET N-CH 100V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD30N10S3L-34

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
31 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2.4V @ 29µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1976pF @ 25V
Power - Max
57W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.031 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
57 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD30N10S3L-34
IPD30N10S3L-34TR
SP000261248

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD30N10S3L-34
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD30N10S3L-34
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPD30N10S3L-34
0
Company:
Part Number:
IPD30N10S3L-34
Quantity:
20 000
Rev. 1.1
1)
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
Defined by design. Not subject to production test.
Qualified with V
GS
= +20/-5V.
1)
1)
1)
1)
1)
1)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1MHz
V
I
V
V
T
V
T
V
di
D
C
j
GS
DD
DD
GS
GS
R
=30A, R
=25°C
F
page 3
=25°C
=50V, I
/dt =100A/µs
=0V, V
=20V, V
=80V, I
=0 to 10V
=0V, I
Conditions
F
F
G
DS
=30A,
=I
D
=3.5
GS
=30A,
=25V,
S
=10V,
,
min.
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1520
typ.
380
150
3.7
45
18
24
72
6
4
3
5
4
1
-
-
IPD30N10S3L-34
max.
1976
494
120
1.2
68
31
30
7
6
-
-
-
-
-
-
-
2008-04-08
Unit
pF
ns
nC
V
A
V
ns
nC

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