IPD30N10S3L-34 Infineon Technologies, IPD30N10S3L-34 Datasheet - Page 7

• Manufacturer Part Number: IPD30N10S3L-34
• Description: MOSFET N-CH 100V 30A TO252-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD30N10S3L-34

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 31 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2.4V @ 29µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1976pF @ 25V
• Power - Max: 57W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.031 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 30 A
• Power Dissipation: 57 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD30N10S3L-34; IPD30N10S3L-34TR; SP000261248

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
= f(T
= f(Q
300
250
200
150
100
50
10
0
9
8
7
6
5
4
3
2
1
0
25
0
j
)
gate
7.5 A
30 A
15 A
D
); I
DD
D
5
= 30 A pulsed
75
10
Q
T
gate
j
[°C]
20 V
[nC]
15
125
80 V
20
175
25
page 7
14 Typ. drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
Q
V
115
110
105
100
V
95
90
g (th)
g s(th)
GS
= f(T
-55
j
); I
Q
-15
g s
D
= 1 mA
25
Q
T
g
Q
j
[°C]
65
sw
Q
g d
IPD30N10S3L-34
105
2008-04-08
145
Q
gate