FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 104

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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Small Signal Transistors – General Purpose Transistors (Continued)
PZTA56
NZT6729
BCP53
NZT753
PZTA92
SOT-23 NPN Configuration
BSV52
MMBT2369
MMBT2369A
MMBT3646
BCX20
MMBT6515
KST5089
MMBT5089
KST4124
MMBT4124
KSC3265
BC818
MMBT2222
BSR13
KST5088
MMBT5088
BC848
BC849
KST4123
KSC2859
BCW60A
BCW60B
BCW60C
BCW60D
BCW31
BCW32
BCW33
BCW65C
BSS79C
Products
V
CEO
100
300
80
80
80
12
15
15
15
20
25
25
25
25
25
25
25
30
30
30
30
30
30
30
30
32
32
32
32
32
32
32
32
40
(V)
V
CBO
100
300
120
80
80
20
40
40
40
30
40
30
30
30
30
30
30
60
60
35
35
30
30
40
35
32
32
32
32
32
32
32
60
75
(V)
V
EBO
4
5
5
5
5
5
4
4
5
5
4
4
4
5
5
5
5
5
5
4
4
5
5
5
5
5
5
5
5
5
5
5
5
6
(V)
Max (A)
0.05
0.05
0.5
1.2
0.5
0.2
0.2
0.3
0.1
0.2
0.2
0.8
0.8
0.1
0.1
0.1
0.2
0.5
0.1
0.1
0.1
0.1
0.5
0.5
0.5
I
–
–
–
–
–
–
–
1
1
C
Min
100
100
100
250
400
400
120
120
100
100
100
300
300
110
110
120
180
250
380
110
200
420
250
100
50
40
40
40
40
40
30
35
50
70
2-99
Discrete Power Products –
Max
1200
1200
250
250
300
120
120
120
120
600
500
360
360
320
630
300
900
900
800
800
150
240
220
310
460
630
220
450
800
630
300
–
–
–
h
FE
@V
0.4
10
10
10
10
10
CE
1
1
2
2
1
1
1
1
5
5
1
1
1
1
5
5
5
5
1
1
5
5
5
5
5
5
5
1
(V) @I
C
100
250
150
500
100
100
100
150
100
100
150
0.1
0.1
0.1
0.1
0.1
10
10
10
10
30
2
2
2
2
2
2
2
2
2
2
2
2
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.25
0.25
0.62
0.25
0.55
0.55
0.55
0.55
0.25
0.25
0.25
0.5
0.5
0.3
0.5
0.4
0.5
0.5
0.5
0.5
0.5
0.3
0.3
0.4
0.7
0.4
1.6
0.5
0.5
0.6
0.6
0.3
0.7
0.3
V
@I
CE (sat)
1000
C
100
250
500
100
300
500
500
500
150
500
100
100
100
500
150
20
50
10
50
10
10
50
50
10
10
50
50
50
50
50
10
10
10
(mA) @I
1.25
1.25
1.25
1.25
B
100
0.5
0.5
0.5
10
10
50
10
30
50
20
50
15
50
10
50
15
2
5
1
5
1
1
5
5
1
1
5
5
5
(mA)