FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 138
![MOSFET N-CH 250V 3.6A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Damper/Damper+Modulation Diodes
TO-220F
FFPF04F150S
FFPF04U150S
FFPF06F150S
FFPF06U150S
FFPF60B150DS
FFPF10F150S
FFPF10U150S
FFPF14X150S
TO-3PF
FFAF60A150DS
FFAF10U170S
Products
Configuration
Single
Single
Single
Single
Series
Single
Single
Single
Series
Single
1500/1600
1500/1600
V
RRM
1500
1500
1500
1500
1500
1500
1500
1700
(V)
I
F (AV)
6/20
6/20
10
10
14
10
4
4
6
6
(A)
2-133
I
60/120
60/120
FSM
100
100
140
100
40
40
60
60
Discrete Power Products –
(A)
V
FM
1.6/2.2
1.6/2.2
Max (V)
1.5
1.8
1.6
1.8
1.6
1.8
2.4
2
t
rr
170/90
170/90
Max (ns)
170
150
170
150
170
150
120
140
Diodes and Rectifiers
I
RM
or I
7/10
7/10
(µA)
100
10
10
15
20
5
7
7
R
Max
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