FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 178
![MOSFET N-CH 250V 3.6A I2PAK](/photos/26/99/269905/i2pak_sml.jpg)
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
- Current page: 178 of 214
- Download datasheet (4Mb)
www.fairchildsemi.com
Small Signal Diodes (Continued)
MMBD1401
MMBD1501A
BAS21
MMBD1401A
Products
Configuration
Single
Single
Single
Single
V
200
200
250
250
(V)
RRM
I
F (AV)
(A)
0.6
0.6
0.6
0.6
2-173
I
(A)
FSM
1
1
1
1
Discrete Power Products –
V
FM
(V)
1.1
1
1
1
Max
(°C/W)
R
357
357
357
357
θJA
Diodes and Rectifiers
t
rr
(ns)
50
50
50
Max
–
I
RM
0.001
(µA)
0.1
0.1
0.1
Max
Related parts for FQI4N25TU
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![SM2G50US60](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FTP5027RTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FTP5021OTU](/photos/16/13/161378/to220_tmb.jpg)
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
![FDMS86300DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3006SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3008SDC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS3016DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86101DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDD86113LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86500DC](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8558S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8560S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS8570S](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMC86116LZ](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
![FDMS86250](/images/manufacturer_photos/0/2/252/fairchild_semiconductor_tmb.jpg)
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet: