FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 109

• Manufacturer Part Number: FQI4N25TU
• Description: MOSFET N-CH 250V 3.6A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI4N25TU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.6 A
• Power Dissipation: 3.13 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -
• Lead Free Status / Rohs Status: Details

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TO-220 PNP Configuration
D45H2A
TO-226 NPN Configuration
TN6714A
FPN530A
FPN530
FPN330A
FPN330
TN2219A
MPSW3725
N6715A
TN6705A
TN6716A
FPN560A
FPN560
TN6707A
MPSW06
TN3019A
TN6717A
ZTX614
TN6718A
TN3440A
TN6719A
TO-226 PNP Configuration
ZTX749
TN6726A
FPN430A
FPN430
FPN630A
FPN630
ZTX749A
Products
V
CEO
100
100
250
300
30
32
60
60
30
30
30
30
30
30
40
40
40
45
60
60
60
80
80
80
80
25
30
30
30
30
30
35
(V)
V
CBO
100
140
120
300
100
300
40
32
60
60
40
60
60
50
50
75
60
50
60
60
80
80
80
80
35
40
35
35
35
35
45
–
(V)
V
EBO
10
5
5
5
5
–
5
5
5
5
5
6
6
5
5
5
5
5
5
4
7
5
5
7
7
5
5
5
5
5
5
5
(V)
Max (A)
1.5
0.5
1.2
1.5
1.5
0.5
1.2
1.2
0.1
0.2
1.5
I
2
2
8
2
3
3
3
3
1
2
3
3
–
1
–
2
2
2
3
3
2
C
10000
Min
215
250
100
100
250
100
250
100
100
250
100
100
100
100
250
100
250
100
100
50
50
60
50
40
50
40
50
50
40
40
50
2-104
Discrete Power Products –
Max
250
500
550
300
250
300
180
250
250
250
550
300
250
300
250
250
160
200
300
250
300
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
10
10
10
10
CE
1
5
2
2
5
1
2
2
2
2
1
1
2
1
2
2
2
1
1
5
1
2
1
2
2
2
2
2
(V) @I
1000
8000
1000
1000
1000
1000
1000
C
500
500
100
100
100
100
150
100
250
250
500
500
250
100
150
250
500
250
100
100
100
100
20
30
2
(mA)
Bipolar Transistors and JFETs
Max (V)
0.35
0.25
0.45
0.95
0.35
0.25
0.35
1.25
0.75
0.45
0.25
0.5
0.3
0.3
0.5
0.3
0.5
0.5
0.5
0.3
0.5
0.5
0.5
0.5
0.5
0.5
0.3
0.5
1
1
1
1
@I
V
CE (sat)
1000
2000
2000
8000
1000
1000
1000
1000
1000
1000
1000
1000
2000
2000
1000
2000
1000
1000
1000
1000
1000
2000
C
500
250
100
500
250
800
250
10
50
30
(mA) @I
B
100
200
200
400
100
100
100
100
100
100
100
100
200
200
100
200
100
100
100
100
100
200
0.5
50
10
10
50
10
10
8
4
3
(mA)