FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 203
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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Discrete
Diode
F F PF 04 F 150 DS
www.fairchildsemi.com
(Continued)
S: Single
DN: Dual Cathode Common
DP: Dual Anode Common
DS: Dual Series
20: 200V ~ 150: 1500V
A,B,C,E: Modulation
F: Fast
U: Ultrafast
X: Xtra Fast
04: 4A
P: TO-220
PF: TO-220F
A: TO-3P
AF: TO-3PF
L: TO-264
B: D
D: D-PAK
V: SOT-23
F: FRD
Y: SBD
Type
Voltage Rating (x10)
t
Current Rating
Package
Device Type
Fairchild
rr
Characteristics
2
-PAK
8-10
Ordering Guides
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