FQI4N25TU Fairchild Semiconductor, FQI4N25TU Datasheet - Page 39
FQI4N25TU
Manufacturer Part Number
FQI4N25TU
Description
MOSFET N-CH 250V 3.6A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI4N25TU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.8A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3.6A
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.6 A
Power Dissipation
3.13 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Lead Free Status / Rohs Status
Details
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TO-252 (DPAK) (Continued)
SFR9310
FQD6P25
FQD4P25
SFR9224
SFR9214
SFR9230B
FQD7P20
FQD5P20
SFR9220
FQD3P20
SFR9210
FQD12P10
SFR9130
FQD8P10
SFR9120
FQD5P10
SFR9110
FDD5614P
FQD17P06
SFR9034
FQD11P06
SFR9024
SFR2955
FQD7P06
SFR9014
FDD6685
Products
Min. (V)
BV
-400
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-30
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.135
0.185
10V
0.69
0.29
0.53
1.05
0.14
0.28
0.45
0.02
1.1
2.1
2.4
0.6
1.4
1.5
2.7
0.3
0.6
1.2
0.1
0.3
0.5
8
4
3
R
DS(ON)
4.5V
0.13
0.03
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-34
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
1.8V
Bold = New Products (introduced January 2003 or later)
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
17
21
10
16
29
19
10
15
21
30
12
16
15
21
30
13
15
15
17
9
6
9
9
9
= 5V
I
D
1.5
4.7
3.1
2.5
1.5
5.4
5.7
3.7
3.1
2.4
1.6
9.4
9.8
6.6
4.9
3.6
2.8
9.4
7.8
7.6
5.4
5.3
15
12
14
40
(A)
MOSFETs
P
D
36
55
45
30
19
49
55
45
30
37
19
50
57
44
32
25
20
42
44
49
38
32
32
28
24
52
(W)
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