NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 14

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

Memory array organization
Figure 6.
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Block
Page
Memory array organization
2048 bytes
Main area
Page buffer, 2112 bytes
2,048 bytes
Block = 64 pages
Page = 2112 bytes (2048 + 64)
x8 DEVICES
bytes
bytes
64
64
8 bits
8 bits
Block
Page
1024 words
1,024 words
Main area
Page buffer, 1056 words
Block = 64 pages
Page = 1056 words (1024 + 32)
x16 DEVICES
words
words
32
32
NAND01G-B2C
16 bits
16 bits
AI09854