NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 53

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND01G-B2C
Figure 22. Address Latch AC waveforms
Figure 23. Data Input Latch AC waveforms
1. Data in last is 2112 in x8 devices and 1056 in x16 devices.
CL
AL
I/O
I/O
W
CL
AL
E
W
E
(E Setup time)
tELWH
(AL Setup time)
(ALSetup time)
tALHWH
tALLWH
tWLWH
(Data Setup time)
(Data Setup time)
tWLWH
tDVWH
tDVWH
(AL Hold time)
tWHALL
tWHWL
Adrress
tWLWL
cycle 1
Data In 0
tWLWL
(CL Setup time)
tWLWH
(Data Hold time)
tCLLWH
(Data Hold time)
tDVWH
tDVWH
tWHDX
tWHDX
tWHALL
tWLWH
tWHWL
Adrress
cycle 2
tWLWL
Data In 1
tWLWH
tDVWH
tWHDX
tDVWH
tWHDX
tWHALL
tWHWL
Adrress
cycle 3
tWLWL
Data In
Last
tWLWH
tWLWH
tDVWH
tWHDX
tWHDX
(E Hold time)
tWHALL
tWHEH
DC and AC parameters
tWHWL
(CL Hold time)
tWHCLH
Adrress
cycle 4
tWLWL
tWHDX
ai13106b
ai13107
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