NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 52

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
1. The time to ready depends on the value of the pull-up resistor tied to the ready/busy pin. See
2.
3. During a program/erase enable operation, t
4. t
5. ES = electronic signature.
Figure 21. Command Latch AC waveforms
52/67
Figure
During a program/erase disable Operation, t
t
RLQX
WHWH
I/O
CL
AL
W
E
is valid when frequency is higher than 33 MHz, t
36.
is the time from W rising edge during the final address cycle to W rising edge during the first data cycle.
(ALSetup time)
H(E Setup time)
(CL Setup time)
tALLWH
tELWH
tCLHWH
(Data Setup time)
tDVWH
WW
WW
is the delay from WP high to W High.
is the delay from WP Low to W High.
RHQX
Command
is valid for frequency lower than 33 MHz.
tWLWH
tWHDX
(Data Hold time)
(E Hold time)
tWHEH
(CL Hold time)
tWHCLL
(AL Hold time)
tWHALH
Figure
34,
Figure 35
NAND01G-B2C
and
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