NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 39

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND01G-B2C
Table 16.
1. O = optional, M = mandatory.
129-130
131-132
133-134
135-136
137-138
139-140
141-163
164-165
166-253
254-255
256-511
512-767
Byte
768+
128
Parameter page data structure (continued)
O/M
M
M
O
M
M
M
M
M
M
M
M
M
M
O
(1)
Bit 6 to bit 15
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Bit 6 to bit 15
Bit 5
Bit 4
Bit 3
Bit 2
Bit 1
Bit 0
Program cache timing mode support
Timing mode support
I/O pin capacitance
Reserved (0)
1 = supports timing mode 5
1 = supports timing mode 4
1 = supports timing mode 3
1 = supports timing mode 2
1 = supports timing mode 1
1 = supports timing mode 0, shall be 1
Reserved (0)
1 = supports timing mode 5
1 = supports timing mode 4
1 = supports timing mode 3
1 = supports timing mode 2
1 = supports timing mode 1
1 = supports timing mode 0
t
t
t
t
time (ns)
Reserved (0)
Vendor specific revision number
Vendor specific
Integrity CRC
Value of bytes 0-255
Value of bytes 0-255
Additional redundant parameter pages
Description
PROG
BERS
R
CCS
maximum page read time (µs)
minimum change column setup
maximum block erase time (µs)
maximum page program time (µs)
Device operations
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