NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 54

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

DC and AC parameters
Figure 24. Sequential data output after read AC waveforms
1. CL = Low, AL = Low, W = High.
Figure 25. Serial access cycle after read, for frequency higher than 33 MHz
54/67
I/O
RB
R
E
tBHRL
(R Accesstime)
RB
I/O
CL
AL
W
R
E
tRLQV
tBHRL
(Read Cycle time)
Data Out
tRHRL
(R High Holdtime)
tRLRL
tRLQV
Data Out
N
tRHQZ
Data Out
Data Out
tRLRL
N+1
Data Out
N+2
tRLQX
Data Out
tRLQV
tEHCLX
tEHQZ
tEHQX
ai14294
tRHQX
tEHQX
tEHQZ
NAND01G-B2C
ai08031b