NAND01GR3B2CZA6E Micron Technology Inc, NAND01GR3B2CZA6E Datasheet - Page 59

• Manufacturer Part Number: NAND01GR3B2CZA6E
• Manufacturer: Micron Technology Inc

Specifications of NAND01GR3B2CZA6E

• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: VFBGA
• Program/erase Volt (typ): 1.7 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.7V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 63
• Lead Free Status / Rohs Status: Compliant

NAND01G-B2C
Figure 32. Program/erase enable waveforms
Figure 33. Program/erase disable waveforms
11.1
RB
RB
WP
WP
I/O
I/O
W
W
Ready/Busy signal electrical characteristics
Figure
signal. The value required for the resistor R
So,
where I
max is determined by the maximum value of t
High
35,
L
is the sum of the input currents of all the devices tied to the Ready/Busy signal. R
Figure 34
tVHWH
tVLWH
80h
80h
and
Figure 36
R P min
R P min 1.8V
R P min 3V
show the electrical characteristics for the Ready/Busy
=
(
-------------------------------------------------------------
(
V DDmax V OLmax
(
)
P
)
=
I OL
=
can be calculated using the following equation:
r
-------------------------- -
8mA
.
-------------------------- -
3mA
–
3.2V
+
1.85V
+
I L
+
I L
I L
10h
10h
)
DC and AC parameters
ai12477
ai12478
59/67
P