FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 11

• Manufacturer Part Number: FDMS3606AS
• Description: MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3606AS

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms, 2.8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S, 154 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A, 27 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 59 nC, 27 nC
• Minimum Operating Temperature: - 55
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
Application Information
1. Switch Node Ringing Suppression
Fairchild’s Power Stage products incorporate a proprietary design* that minimizes the peak overshoot, ringing voltage on the switch
node (PHASE) without the need of any external snubbing components in a buck converter. As shown in the figure 29, the Power Stage
solution rings significantly less than competitor solutions under the same set of test conditions.
*Patent Pending
Power Stage Device
Figure 29. Power Stage phase node rising edge, High Side Turn on
11
Competitors solution
www.fairchildsemi.com