FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 7
FDMS3606AS
Manufacturer Part Number
FDMS3606AS
Description
MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS3606AS.pdf
(15 pages)
Specifications of FDMS3606AS
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms, 2.8 mOhms
Forward Transconductance Gfs (max / Min)
61 S, 154 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
13 A, 27 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Gate Charge Qg
59 nC, 27 nC
Minimum Operating Temperature
- 55
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Lead Free Status / Rohs Status
Details
©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
Typical Characteristics (Q2 N-Channel)
100
100
80
60
40
20
1.6
1.4
1.2
1.0
0.8
80
60
40
20
0
0
Figure 14. On-Region Characteristics
Figure 16. Normalized On-Resistance
0.0
1.5
-75
Figure 18. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
-50
D
GS
vs Junction Temperature
= 27 A
= 5 V
= 10 V
0.2
V
V
T
DS
-25
GS
J
V
2.0
,
GS
,
, GATE TO SOURCE VOLTAGE (V)
V
JUNCTION TEMPERATURE (
V
DRAIN TO SOURCE VOLTAGE (V)
GS
GS
= 3.5 V
= 3 V
0
= 4 V
0.4
V
GS
T
25
J
T
= 4.5 V
μ
J
= 25
2.5
s
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
o
V
C
0.6
GS
o
C
= 10 V
75
3.0
o
100 125 150
C )
0.8
T
J
= -55
μ
o
s
C
1.0
3.5
T
J
7
= 25
o
C unlenss otherwise noted
Figure 15. Normalized on-Resistance vs Drain
0.001
0.01
100
0.1
10
8
6
4
2
0
8
6
4
2
0
1
Figure 17. On-Resistance vs Gate to
0.0
Forward Voltage vs Source Current
0
2
Figure 19. Source to Drain Diode
V
GS
Current and Gate Voltage
= 0 V
V
T
0.2
SD
J
V
= 125
GS
20
, BODY DIODE FORWARD VOLTAGE (V)
V
GS
= 3 V
I
Source Voltage
D
4
,
,
GATE TO SOURCE VOLTAGE (V)
o
DRAIN CURRENT (A)
T
C
J
0.4
T
= 25
J
= -55
40
T
J
o
= 25
C
o
0.6
C
6
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
I
C
D
T
J
V
= 27 A
60
= 125
GS
= 4 V
0.8
o
C
8
www.fairchildsemi.com
80
V
V
V
GS
GS
1.0
GS
= 3.5 V
= 4.5 V
= 10 V
μ
μ
s
s
100
1.2
10