FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 9

• Manufacturer Part Number: FDMS3606AS
• Description: MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3606AS

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms, 2.8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S, 154 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A, 27 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 59 nC, 27 nC
• Minimum Operating Temperature: - 55
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
Typical Characteristics (Q2 N-Channel)
0.001
0.01
0.1
2
1
10
-3
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 26. Junction-to-Ambient Transient Thermal Response Curve
10
-2
SINGLE PULSE
R
(Note 1d)
θ
JA
= 120
10
-1
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
T
J
9
= 25
1
o
C unless otherwise noted
10
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
x Z
P
θJA
DM
1
/t
100
x R
2
θJA
t
1
+ T
t
2
A
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