FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 6
FDMS3606AS
Manufacturer Part Number
FDMS3606AS
Description
MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDMS3606AS.pdf
(15 pages)
Specifications of FDMS3606AS
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
11 mOhms, 2.8 mOhms
Forward Transconductance Gfs (max / Min)
61 S, 154 S
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
13 A, 27 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
Power 56
Gate Charge Qg
59 nC, 27 nC
Minimum Operating Temperature
- 55
Module Configuration
Dual
Continuous Drain Current Id
40A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0058ohm
Lead Free Status / Rohs Status
Details
©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
Typical Characteristics (Q1 N-Channel)
0.001
0.01
0.1
1
2
10
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
10
-3
SINGLE PULSE
R
(
Note 1c
θ
JA
= 125
10
)
-2
o
C/W
t, RECTANGULAR PULSE DURATION (sec)
10
-1
T
J
6
= 25 °C unless otherwise noted
1
NOTES:
DUTY FACTOR: D = t
PEAK T
J
10
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
100
t
1
+ T
t
2
A
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