FDMS3606AS Fairchild Semiconductor, FDMS3606AS Datasheet - Page 5

• Manufacturer Part Number: FDMS3606AS
• Description: MOSFET Power 30V Asymtrc Dual NCh PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Specifications of FDMS3606AS

• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 11 mOhms, 2.8 mOhms
• Forward Transconductance Gfs (max / Min): 61 S, 154 S
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A, 27 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: Power 56
• Gate Charge Qg: 59 nC, 27 nC
• Minimum Operating Temperature: - 55
• Module Configuration: Dual
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.0058ohm
• Lead Free Status / Rohs Status: Details

©2011 Fairchild Semiconductor Corporation
FDMS3606AS Rev.C4
Typical Characteristics (Q1 N-Channel)
0.01
100
20
10
0.1
10
10
1
0.01
0.01
Figure 7.
1
8
6
4
2
0
0
THIS AREA IS
LIMITED BY r DS
I
SINGLE PULSE
T
R
T
Figure 9.
D
Figure 11. Forward Bias Safe
J
A
θ
= 13 A
JA
= MAX RATED
= 25
= 125
V
Switching Capability
o
C
5
0.1
DS
Gate Charge Characteristics
t
0.1
AV
o
, DRAIN to SOURCE VOLTAGE (V)
C/W
Operating Area
, TIME IN AVALANCHE (ms)
Unclamped Inductive
Q
(
on
g
, GATE CHARGE (nC)
)
10
T
J
1
=
V
1
125
T
DD
J
= 25
= 10 V
V
o
C
DD
15
T
o
J
= 20 V
C
= 100
10
V
10
DD
o
C
20
= 15 V
1 ms
100 ms
DC
100us
10 ms
1s
10s
100
100
25
200
T
J
5
= 25 °C unless otherwise noted
2000
1000
1000
100
100
100
0.1
80
60
40
20
10
10
Figure 10. Maximum Continuous Drain
0
1
10
25
0.1
Figure 12. Single Pulse Maximum
Figure 8.
-4
f = 1 MHz
V
Limited by Package
Current vs Case Temperature
GS
V
= 0 V
10
GS
-3
V
= 4.5 V
50
DS
Power Dissipation
to Source Voltage
, DRAIN TO SOURCE VOLTAGE (V)
T
C
Capacitance vs Drain
10
,
CASE TEMPERATURE (
t, PULSE WIDTH (sec)
-2
75
1
10
-1
V
GS
= 10 V
100
1
SINGLE PULSE
R
T
A
θ
R
JA
= 25
θ
10
JC
o
= 125
C )
= 3.5
125
o
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C
10
o
100
C/W
C
C
o
C
C/W
oss
rss
iss
1000
150
30