H5PS1G83EFR-S6C HYNIX SEMICONDUCTOR, H5PS1G83EFR-S6C Datasheet - Page 25

• Manufacturer Part Number: H5PS1G83EFR-S6C
• Description: 58T1895
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H5PS1G83EFR-S6C

• Memory Type: SDRAM
• Memory Configuration: 128M X 8
• Access Time: 15ns
• Memory Case Style: FBGA
• No. Of Pins: 60
• Operating Temperature Range: 0°C To +85°C
• Memory Size: 1 Gbit
• Rohs Compliant: Yes

Internal write to read command delay
Internal read to precharge command delay
Exit self refresh to a non-read command
Exit self refresh to a read command
Exit precharge power down to any non-read
command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(HIGH and LOW pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
ODT turn-off (Power-Down mode)
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Rev. 0.4 / Nov 2008
Parameter
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
tCKE
tAOFD
tAOFPD
tOIT
tDelay
tAOND
tAON
tAONPD
tAOF
tANPD
tAXPD
Symbol
tIS + tCK (avg)
tAC(min)+2
tRFC + 10
tAC(min)
tAC(min)
tAC(min)
7 - AL
+ tIH
min
200
2.5
7.5
7.5
+2
2
3
2
3
8
0
2
DDR2-667
tAC(max)+ 0.6
2.5tCK(avg)+
tAC(max)+1
tAC(max)+1
2tCK(avg)+
tAC(max)
max
+0.7
2.5
12
2
-
-
-
tRFC + 10
tIS + tCK
tAC(min)
tAC(min)
tAC(min)
tAC(min)
8 - AL
(avg)
+ tIH
min
200
7.5
7.5
+2
2.5
+2
2
3
2
3
8
0
2
DDR2-800
2.5tCK(avg)+
tAC(max)+1
tAC(max)+1
2tCK(avg)+
tAC(max)
tAC(max)
max
+0.7
+0.6
2.5
12
2
-
-
-
H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
-Continued-
Unit
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
6,16,40
17,43,4
24,32
17,45
3,32
1, 2
32
27
16
15
32
1
5
25