CY8C5248LTI-030 Cypress Semiconductor Corp, CY8C5248LTI-030 Datasheet - Page 81

• Manufacturer Part Number: CY8C5248LTI-030
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY8C5248LTI-030

• Lead Free Status / Rohs Status: Compliant

Table 11-46. EEPROM AC Specifications
11.7.3 SRAM
Table 11-47. SRAM DC Specifications
Table 11-48. SRAM AC Specifications
Document Number: 001-66236 Rev. *A
T
V
F
Parameter
Parameter
Parameter
WRITE
SRAM
SRAM
Single row erase/write cycle time
EEPROM data retention time, retention
period measured from last erase cycle
SRAM retention voltage
EEPROM data retention time, retention
period measured from last erase cycle
SRAM operating frequency
Description
Description
Description
PRELIMINARY
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp. T
10 K erase/program cycles
Average ambient temp, T
1M erase/program cycles
Average ambient temp, T
100 K erase/program cycles
Average ambient temp. T
10 K erase/program cycles
Conditions
Conditions
Conditions
PSoC
A
A
A
A
A
A
≤ 25 °C,
≤ 55 °C,
≤ 85 °C,
≤ 25 °C,
≤ 55 °C,
≤ 85 °C,
®
5: CY8C52 Family Datasheet
Min
Min
Min
DC
1.2
20
20
10
20
20
10
–
Typ
Typ
Typ
2
–
–
–
–
–
–
–
–
40.01
Max
Max
Max
20
–
–
–
–
–
–
–
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Units
years
Units
years
Units
MHz
ms
V