NT2GC64B8HC0NS Nanya Techology, NT2GC64B8HC0NS Datasheet - Page 10
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NT2GC64B8HC0NS
Manufacturer Part Number
NT2GC64B8HC0NS
Description
Un-buffered Ddr3 So-dimm
Manufacturer
Nanya Techology
Datasheet
1.NT2GC64B8HC0NS.pdf
(16 pages)
PC3-8500 / PC3-10600
Un-buffered DDR3 SO-DIMM
NT2GC64B8HC0NS
Operating, Standby, and Refresh Currents
T
REV 1.0
12/2009
CASE
= 0 °C ~ 85 °C; V
Symbol
IDD2P0
IDD2P1
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD3P
IDD5B
IDD0
IDD1
IDD6
IDD7
Operating One Bank Active-Precharge Current
Operating One Bank Active-Read-Precharge Current
Precharge Power-Down Current Slow Exit
Precharge Power-Down Current Fast Exit
Precharge Quiet Standby Current
Precharge Standby Current
Active Power-Down Current
Active Standby Current
Operating Burst Read Current
Operating Burst Write Current
Burst Refresh Current
Self Refresh Current: Normal Temperature Range
Operating Bank Interleave Read Current
DDQ
= V
DD
= 1.5V ± 0.075V [2GB – 2 Ranks, 128Mx8 DDR3 SDRAMs]
Parameter/Condition
10
NANYA reserves the right to change products and specifications without notice.
PC3-8500
(-BE)
1514
1514
2042
3538
1162
986
440
968
880
528
968
176
211
© NANYA TECHNOLOGY CORPORATION
PC3-10600
(-CG)
1074
1250
1056
1056
1866
1778
2218
4418
528
968
616
176
211
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA