NT2GC64B8HC0NS Nanya Techology, NT2GC64B8HC0NS Datasheet - Page 8
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NT2GC64B8HC0NS
Manufacturer Part Number
NT2GC64B8HC0NS
Description
Un-buffered Ddr3 So-dimm
Manufacturer
Nanya Techology
Datasheet
1.NT2GC64B8HC0NS.pdf
(16 pages)
PC3-8500 / PC3-10600
Un-buffered DDR3 SO-DIMM
NT2GC64B8HC0NS
Environmental Requirements
Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional
Absolute Maximum DC Ratings
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer
3. VDD and VDDQ must be within 300 mV of each other at all times;and VREF must be not greater
Operating temperature Conditions
Note:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions,
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85 °C and 95 °C case temperature. Full
DC Electrical Characteristics and Operating Conditions
Note:
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
REV 1.0
12/2009
Symbol
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability
to JESD51-2 standard.
please refer to the JEDEC document JESD51-2.
DRAM case temperature must be maintained between 0 to 85 °C under all operating conditions
specifications are supported in this range, but the following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 μs. It is also possible to specify
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use the Manual Self-Refresh
V
V
Symbol
Symbol
Symbol
V
T
IN
DDQ
V
T
T
T
DD
OPER
V
, V
a component with 1X refresh (tREFI to 7.8μs) in the Extended Temperature Range. Please refer to supplier data sheet and/or the
DIMM SPD for option availability.
mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b) or enable the optional Auto Self-Refresh mode
(MR2 A6 = 1b and MR2 A7 = 0b). Please refer to the supplier data sheet and/or the DIMM SPD for Auto Self-Refresh option
availability, Extended Temperature Range support and tREFI requirements in the Extended Temperature Range.
OPR
STG
DDQ
STG
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
DD
OUT
Supply Voltage
Output Supply Voltage
Normal Operating Temperature Range
Extended Temperature Range
Operating Temperature (ambient)
Storage Temperature
Voltage on VDD pins relative to Vss
Voltage on VDDQ pins relative to Vss
Voltage on I/O pins relative to Vss
Storage Temperature
Parameter
Parameter
Parameter
Parameter
8
1.425
1.425
Min
NANYA reserves the right to change products and specifications without notice.
Typ
1.5
1.5
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
-0.4 V ~ 1.975 V
85 to 95
Rating
0 to 85
-55 to +100
Rating
1.575
1.575
Max
-50 to 100
Rating
0 to 65
© NANYA TECHNOLOGY CORPORATION
Units
V
V
Units
Units
°C
V
V
V
°C
°C
Notes
Units
Note
1,2
1,2
1, 3
1, 3
1, 2
Note
°C
°C
1, 2
1, 3
1