m52s128324a Elite Semiconductor Memory Technology Inc., m52s128324a Datasheet
m52s128324a
Manufacturer Part Number
m52s128324a
Description
1m X 32 Bit X 4 Banks Synchronous Dram
Manufacturer
Elite Semiconductor Memory Technology Inc.
Datasheet
1.M52S128324A.pdf
(47 pages)
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ESMT
SDRAM
FEATURES
GENERAL DESCRIPTION
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a
variety of high bandwidth, high performance memory system applications.
Elite Semiconductor Memory Technology Inc.
The M52S128324A is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits.
- CAS Latency (1, 2 & 3 )
- Burst Length ( 1, 2, 4, 8 & full page )
- Burst Type ( Sequential & Interleave )
- PASR (Partial Array Self Refresh)
- TCSR (Temperature compensated Self Refresh)
- DS (Driver Strength)
JEDEC standard 2.5V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
All inputs are sampled at the positive going edge of the
system clock
Special function support
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
Issued by EMRS
ORDERING INFORMATION
M52S128324A-10BG 100MHz
M52S128324A-10TG 100MHz
M52S128324A-7TG
M52S128324A-7BG
Product No.
1M x 32 Bit x 4 Banks
Synchronous DRAM
143MHz
143MHz
Publication Date: Mar. 2009
Revision: 1.4
FREQ.
MAX
M52S128324A
PACKAGE COMMENTS
86 TSOPII
86 TSOPII
90 FBGA
90 FBGA
Pb-free
Pb-free
Pb-free
Pb-free
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